2SC3495 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
. Adoption of FBET process. . . High DC current gain (h, 500 to 2000). . High breakdown voltage Togo? 100V) « + Low collector to emitter saturation voltage (VoE(sat)$0-5¥) + High Vago (Vgpo%15V). EBO ,‘*EBOQ' - Small cy) (¢op=1.8PF typ) Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo 120 Vv Collector to Emitter Voltage Voro 100 Vv Emitter to Base Voltage Vigo 15 Vv Collector Current Ig 50 mA Collector Current(Pulse) Icp 100 mA Base Crrent~ Ip 10 mA Collector Dissipation Po 500 mW Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 °c . Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Tego Vopr 80V,Ip=0 0.1 vA Emitter Cutoff Current Igpo Vp 10V, Ig=0 0.1 pA DC Current Gain bps yoecoue tgs lone 500 1000 2000 Gain-Bandwidth Product fr Vogt 10V, I ¢=10mA 170 MHz Output Capacitance Cob Vogt 10V, f= 1MAz 1.8 pF Collector to Emitter Vor(sat) Ig=10mA,ITp=200Q A 0.1 0.5 Vv Saturation Voltage Base to Emitter Vpe(sat) Ig=10mA,Ip=200u A 0.7 1.0 v Saturation Voltage Collector to Base V(BR)CBO Ig=10 A, Ip=0 120 v Breakdown Voltage Collector to Emitter Vopr)cEo Ig=tmA, Rpp=0o 100 v Breakdown Voltage Emitter to Base VBR) EBO Tp=1Q A, Ig=0 15 v Breakdown Voltage Package Dimensions 2003A (unit: mm) 20 one F ial 04s t JEDEC: TO-92 B. Base BIAS : SC-43 . Collector SANYO: NP E. Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN _ 6140MO/4237AT/D174MY,TS No.1430-1/3
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Pc - T, Bo C - Ta vm | TT TT O50 oe Fo KT ERNE x0 a a fo ti Ni a | m0 fo | LNT g 10 N gti || i] S 0 N 0 20 0 © 8 0 120 “0 0 Ambient Temperature,Ta - °C WI No products desoribed or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall D Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD. its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use:
2 Not impose any responsibility for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of _ third parties, eee No. 1430-3/3