2SC3450 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3450
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO= 500V(Min)
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3450
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.8A; VCE= 5V 15 50 hFE-2 DC Current Gain IC= 4A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V 18 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 120 pF Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 5A, IB1= 1A; IB2= -2A RL= 40Ω; VCC= 200V 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 isc Website：www.iscsemi.cn 2