2SA1339 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
+ Very small-sized package permitting sets to be small-sized, slim * High breakdown voltage: VcRo=(-) 50V + Complementary pair transistor having large current capacity and high frp + Adoption of FBET process ()+ 2SA1339 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage VCBO (-)60 Vv Collector to Emitter Voltage VCEO (-)50 Vv Emitter to Base Voltage VEBO (-)5 Vv Collector Current Ic (-) 500 mA Collector Current(Pulse) Top (-) 800 mA Collector Dissipation Pc 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°c min typ max unit Collector Cutoff Current IcBo VcB=(-) 40V,IE=0 (-)0.1 vA Emitter Cutoff Current IEBO VEB= (-) 4V (-)0.1 BA DC Current Gain hFE VcE=(-)5V,Ic=(-)10mA —-100* 560* Gain Bandwidth Product fr VcE=(-) 10V, Ic=(-) 50mA 300 MHz (200) Output Capacitance Cob VeB=(-) 10V, £=1MHz 3.7 pF (5.6) C-E Saturation Voltage VcE(sat) Ic=(-)100mA,Ip=(~) 10mA 0.1 0.3 Vv (0.15) (0.4) B-E Saturation Voltage VBE(sat) Ic=(-)100mA,Ip=(-) 10mA 0.8 1.2 v C-B Breakdown Voltage V(BR)CBO Ic=(-)1QA,Ip=0 (-) 60 Vv C-E Breakdown Voltage V(BR)CEO Ic=(-) 100A, RBE=0 (-)50 Vv E-B Breakdown Voltage V(BR)EBO Ip=(-)1QA,Ic=@ (-)5 Vv Rise Time ton Vec=20V 70 (70) ns Storage Time tstg Ic=101pi=-101B2=100maA 400 (400) ns Fall Time te 70 (50) ns * : The 2SA1339/25C3393 are classified by 10mA hpp as follows: [took 200 | 140 s 280] . 2033 Package Dimensions _ (2003400 T 280 _v 560] (untt;mmn) Switching Time Test Circuit - — 2a 3 15.0 Ie RL) ° 7 B weur \\bs rn if. vRo 200 id] a it 30 so ry} H i B: Base no me C: Collector QW ; Yece20v E: Emitter (For PNP, the. polarity is reversed.) SANYO: SPA Unit(Resistance ; 2 , Capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3197KI/1114KI ,MT No,1392-1/4
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I ASO Pc - Ta fgg a a OO 2” . ¢ fe eS ee . NEN oe tH g 8 oN SS =an “mot NI SCT Re TENN gz a = r0 S TZ oT Ti Ty Pe TNT a ~ op a mN o IN Pn Nee ~ a TTP TNE] 8 & (For PNP, minus sign_[ [TY I] a is omitted.) fF TTlT] 8. IN 1D 0 1 9 a a a a a a Collector to Emitter Voltage,VcE - V Ambient Temperature,Ta - °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.1392-4/4