2SC3387 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387
DESCRIPTION
- With TO-3PN package
- High breakdown voltage
- Fast switching speed
APPLICATIONS
- For horizontal deflection output
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 10 A PC Collector power dissipation T C=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA ;IB=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 10 μA IEBO Emitter cut-off current V EB=4V; IC=0 10 μA hFE DC current gain I C=0.3A ; VCE=5V 15
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)