2SC3357-HF KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low noise and high gain
  • High power gain
  • Large Ptot 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 1.2 W Junction to Ambient Resistance Rth (j-a) 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Note.1: Pulse measurement: PW ≤ 350 us, Duty Cycle ≤ 2% ■ Classification of hfe Type 2SC3357-H-HF 2SC3357-F-HF 2SC3357-E-HF Range 50-100 80-160 125-250 Marking RH F RF F RE F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 12 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 3 Collector-base cut-off current ICBO VCB= 20V , IE= 0 1 Emitter cut-off current IEBO VEB= 3V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain (Note.1) hFE VCE= 10V, IC= 20mA 50 250 Insertion Power Gain |S21e| VCE = 10V, IC = 20mA, f= 1GHz 9 VCE = 10V, IC = 7mA, f= 1GHz 1.1 VCE = 10V, IC = 40mA, f= 1GHz 1.8 3 Reverse Transfer Capacitance Cre VCB= 10V, IE= 0,f=1MHz 1 pF Transition frequency fT VCE= 10V, IC= 20mA 6.5 GHz V uA Noise Figure NF dB V
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC3357-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics DC Current Gain hFE Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 100 1 5 10 055.0 VCE = 10 V 0 25 50 75 100 125 150 Total Power Dissipation Ptot (W) Ambient Temperature TA (˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ceramic substrate 16 cm2 × 0.7 mm (t) Free air Rth (j-a) 312.5˚C/W Reverse Transfer Capacitance Cre (pF) Collector to Base Voltage VCB (V) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.3 0.50.2 1 2 5 10 3020 f = 1 MHz VCE = 10 V Gain Bandwidth Product fT (GHz) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.2 0.3 0.5 0.1 1 5 10 50 0015.01.0 VCE = 10 V f = 1 GHz Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) 0.5 1 10 50 075 VCE = 10 V IC = 20 mA Frequency f (GHz) INSERTION POWER GAIN, MAG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 0.05 0.1 0.5 1 22.0 MAG |S21e|2 NPN Transistors 2SC3357-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 100 20 30 40 50 60 70 Collector Current IC (mA) IM2, IM3 vs. COLLECTOR CURRENT 2nd Order Intermodulation Distortion IM2 (dBc) 3rd Order Intermodulation Distortion IM3 (dBc) IM2 IM3 VCE = 10 V Vo = 100 dB V/50 Ω Rg = Re = 50 Ω IM2 : f = 90 + 100 MHz IM3 : f = 2 × 200 – 190 MHz µ 0.5 1 5 10 50 70 Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure NF (dB) VCE = 10 V f = 1 GHz NPN Transistors 2SC3357-HF