2SC3356L-A AITSEMI

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AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - - 1 - DESCRIPTION FEATURES The 2SC3356L is available in SOT-23 package.

ORDERING INFORMATION

X = A , B See below hFE Classification Table SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products ⚫ High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz ⚫ Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz ⚫ fT (TYP.) : TYP. Value is 8GHz @VCE=10V, IC=30mA ⚫ Ultra high frequency low noise transistor ⚫ Silicon epitaxial bipolar process. ⚫ High power gain, low noise figure, ⚫ High dynamic range and ideal current characteristics ⚫ Mainly used in VHF, UHF and CATV ⚫ High frequency wideband low noise amplifier. ⚫ Available in SOT-23 package hFE CLASSIFICATION PIN DESCRIPTION Classification A B Marking R24 R25 hFE 80-140 120-200

AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA=25℃, unless Otherwise noted Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristic s are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise specified VCBO, Collector-base breakdown voltage 20V VCEO, Collector-emitter breakdown voltage 15V VEBO, Emitter-base breakdown voltage 2V IC, Collector Current 100mA PC, Collector Power Dissipation 365mW TJ, Junction Temperature 150℃ TSTG, Storage Temperature -65℃~+150℃ Parameter Symbol Characteristic Min Typ. Max Unit Collector-base breakdown voltage VCBO IC=1.0μA 20 - - V Collector Cutoff Current ICBO VCB=10V - - 0.1 µA Emitter Cutoff Current IEBO VEB=1.0V - - 0.1 µA DC Current Gain hFE VCE=5V, IC=20mA A 80 - 140 B 120 - 200 Gain Bandwidth Product fT VCE=10V, IC=30mA - 8 - GHz Insertion Power Gain S21E 2 VCE=10V, IC=30mA, f =1.0GHz - 12 - dB Noise Factor NF VCE=10V, IC=7mA, f=1.0GHz - 1.5 - dB

Figure 7. DC Current Gain vs. Collector Current

AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM MIN MAX A 0.35 0.5 B 1.4 1.7 C 2.7 3.1 D 0.95 G 1.7 2.1 H 2.7 3.1 K 1 1.3 L 0.5 0.85 M 0.1 0.35

AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR REV2.1 - MAR 2012 RELEASED, JUN 2017 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrate d circuit product or service w ithout notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit pro ducts are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical a pplications. Use of AiT products in such applications is understood to be fully at the risk of the custom er. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.