2SC3356-HF KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO 20 V VegatlovrettimeotrotcelloC CEO 12 V VegatlovesabotrettimE EBO 3.0 V I)CD(tnerrucrotcelloC C 100 mA PnoitapissidrewoplatoT tot 200 mW TerutarepmetnoitcnuJ j 150 TegnarerutarepmetegarotS stg -65 to +150 hFE Classification Electrical Characteristics Ta = 25 *. Pulse measurement: PW 350 s, Duty Cycle 2%. Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 12 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 3 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 1 Emitter cut-off current IEBO VEB= 3V , IC=0 1 Collector-emitter saturation voltage * VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage * VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain * hFE VCE= 10V, IC= 20mA 50 400 Insertion power gain |S21e | VCE = 10 V, IC = 20 mA, f= 1GHz 11.5 Noise figure NF VCE = 10 V, IC = 7 mA, f= 1GHz 1.1 2 Reverse transfer capacitance Cre VCB= 10V, IE= 0,f=1MHz 0.55 1 pF Transition frequency fT VCE= 10V, IC= 20mA 7 GHz V uA V dB 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SC3356-R23-HF 2SC3356-R24-HF 2SC3356-R25-HF 2SC3356-R26-HF Range 50-100 80-160 125-250 250-400 Marking R23 F R24 R25 R26 F F F NPN Transistors 2SC3356-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 100 200 1 5 10 500.5 100 150 TA-Ambient Temperature-°C IC-Collector Current-mA DC CURRENT GAIN vs. COLLECTOR CURRENT PT-Total Power Dissipation-mWhFE-DC Current Gain VCE = 10 V 0.5 1 5 10 50 70 IC-Collector Current-mA INSERTION GAIN vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB VCE = 10 V f = 1.0 GHz 0.3 0.5 0 0.5 1 2 5 10 20 30 VCB-Collector to Base Voltage-V FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Cre-Feed-back Capacitance-pF f = 1.0 MHz 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 0 0.5 1.0 105.0 30 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT fT-Gain Bandwidth Product-MHz VCE = 10 V f-Frequency-GHz INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB VCE = 10 V IC = 20 mA Gmax |S21e|2 Free Air NPN Transistors 2SC3356-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 0.5 1 5 10 50 70 IC-Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT NF-Noise Figure-dB VCE = 10 V f = 1.0 GHz 0 2 4 6 8 10 VCE-Collector to Emitter Voltage-V NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE NF-Noise Figure-dB |S21e|2-Insertion Gain-dB f = 1.0 GHz IC = 20 mA |S21e|2 NF ANGLE OF REFLECTION COEFFCIENT IN DEGREES 20 0600 8090100 110 120 130 140 150 −160 −150 −140 −130 −120 −110 −100 −90 −80 −70 −60 −50 −40 −30 −20 −10 0 0.280.22 0.30 0.20 0.32 0.18 0.34 0.160.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.460.04 0.21 0.19 0.17 0.15 0.130.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.370.39 0.41 0.43 0.45 0.47 0.020.48 0.010.49 0.490.01 0.480.02 0.470.03 0.460.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.290.21 0.280.22 0.270.23 0.260.24 52.0 52.0 0.240.26 0.230.27 WAVELENGTHS TOW ARD LOAD W AVELENGTHS TOW ARD GENERATOR 2.0 6.0 4.0 3.0 1.8 1.6 1.4 1.20.90.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 +JX –––– Z O 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 3.0 4.0 1.8 2.0 1.20.10.9 1.4 1.6 REACTANCE COMPONENT R –––– ZO ) NEGATIVEREACTANCE COM PONENT POS ITIVE REACTANCECOMPONENT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 O 0.2 0.4 0.6 0.8 1.0 S11e, S22e-FREQUENCY S21e-FREQUENCY 90° 30° −30° 60° −60° 180° 150° −150° 120° −120° −90° 5 10 15 20 S21e

0.2 GHz

2.0 GHz

90° 30° −30° 60° −60° 180° 150° −150° 120° −120° −90° S12e VCE = 10 V

200 MHz Step

VCE = 10 V IC = 20 mA CONDITION VCE = 10 V IC = 20 mA CONDITION IC = 20 mA S22e S11e IC = 20 mA IC = 5 mA IC = 5 mA NPN Transistors 2SC3356-HF