2SC3355 integrated circuit reference
Local datasheet available

IC

2SC3355

6 manufacturer specifications

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Manufacturer variants
6
Selected specification
Renesas Technology Corp
Documents
8

Manufacturer Specifications

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6 manufacturers / 8 documents
Manufacturer Series Package Documents Available Select specification
Renesas Technology Corp - - 2 PDF HTML Viewing
Unisonic Technologies - - 2 PDF HTML View spec
American Microsemicondu... - - 1 PDF HTML View spec
Foshan Blue Rocket Elec... - - 1 PDF HTML View spec
Inchange Semiconductor ... - - 1 PDF HTML View spec
NEC - - 1 PDF HTML View spec

Online Datasheet

Read the Renesas Technology Corp document online.

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Renesas Technology Corp 2SC3355 overview.

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Summary

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Description

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Source title 2SC3355 Datasheet(PDF) - Renesas Technology Corp