2SC3354 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. l High transition frequency fT. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 300 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common base reverse transfer capacitance Common emitter reverse transfer capacitance Transition frequency Power gain Symbol V CBO V EBO hFE V BE C rb C re fT* PG Conditions IC = 100mA, IE = 0 IE = 10mA, IC = 0 V CB = 10V , IE = –2mA V CB = 10V , IE = –2mA V CE = 6V , IC = 0, f = 1MHz V CE = 10V , IC = 1mA, f = 10.7MHz V CB = 10V , IE = –15mA, f = 200MHz V CB = 10V , IE = –1mA, f = 100MHz min 600 typ 720 0.8 1200 max 250 1.5 1600 Unit V V mV pF pF MHz dB *hFE Rank classification Rank T S fT(MHz) 600 ~ 1300 900 ~ 1600

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB Zrb — IE C re — V CE 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 250mA 200mA 150mA 100mA 50mA IB=300mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1600 1200 400 1000 1400 800 200 600 f=100MHz Ta=25˚C VCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 120 100 f=2MHz Ta=25˚C VCE =6V 10V Emitter current IE (mA ) Reverse transfer impedance Zrb (W ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF)

PG — IE NF — IE f=100MHz R g=50W Ta=25˚C VCE =10V Emitter current IE (mA ) Power gain PG (dB) VCE =10V f=100MHz R g=50kW Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB)