2SC3352 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3352 DESCRIPTION ·
- With TO-220Fa package
- High voltage
- High speed switching
APPLICATIONS
- For high speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 1.5 A ICM Collector current-Peak 3.0 A IB Base current 0.5 A TC=25℃ 25 PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220Fa) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3352 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA , IB=0 500 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.2A ; VCE=10V 2.5 MHz Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time IC=1A; IB1=-IB2=0.2A VCC=200V 1.0 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3352 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)