2SC3346 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 DESCRIPTION ·

  • With TO-220C package
  • Complement to type 2SA1329
  • High speed switching time : t stg=1.0μs(Typ.)
  • Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A

APPLICATIONS

  • For high current switching applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A IB Base current 2 A PC Collector dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ; IB=0 80 V VCEsat Collector-emitter saturation voltage I C=6A; IB=0.3A 0.2 0.4 V VBEsat Base-emitter saturation voltage I C=6A; IB=0.3A 0.9 1.2 V ICBO Collector cut-off current V CB=80V ;IE=0 10 μA IEBO Emitter cut-off current V EB=6V; IC=0 10 μA hFE-1 DC current gain I C=1A ; VCE=1V 70 240 hFE-2 DC current gain I C=6A ; VCE=1V 40 fT Transition frequency I C=1A ; VCE=5V 80 MHz COB Output capacitance I E=0 ; VCB=10V,f=1MHz 220 pF Switching times Ton Turn-on time 0.2 μs tstg Storage time 1.0 μs tf Fall time IB1=-IB2=0.3A; RL=5Ω,VCC=30V Pw=20μs ;Duty≤1% 0.2 μs ‹ hFE-1 classifications O Y 70-140 120-240

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346