2SC3345 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1328
- Low collector saturation voltage
- High speed switching time
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A IB Base current 2 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ,IB=0 50 V VCEsat Collector-emitter saturation voltage I C=6A; IB=0.3A 0.4 V VBEsat Base-emitter saturation voltage I C=6A; IB=0.3A 1.2 V ICBO Collector cut-off current V CB=60V; IE=0 10 μA IEBO Emitter cut-off current V EB=6V; IC=0 10 μA hFE-1 DC current gain I C=1A ; VCE=1V 70 240 hFE-2 DC current gain I C=6A ; VCE=1V 40 Cob Output capacitance I E=0 ; VCB=10V;f=1MHz 180 pF fT Transition frequency I C=1A ; VCE=5V 90 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 1.0 μs tf Fall time IC=6.0A IB1=- IB2=0.3A RL=5Ω;VCC=30V 0.2 μs hFE-1 Classifications O Y 70-140 120-240
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345