2SC3440_15 KEXIN

Document overview

www.kexin.com.cn 1 Transistors NPN Transistors 2SC3440 ■ Features

Low collector to emitter saturation voltage.
Excellent linearity nof DC forward current gain.
Super mini package for easy mounting.
High collector current.
Complementary to 2SA1365 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 700 mA Peak Collector Current ICM 1 A Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 100 u A，RBE= ∞ 20 Emitter - base breakdown voltage VEBO IE= 100 u A， IC= 0 4 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=25mA 0.2 0.5 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=25mA 1.2 DC current gain hFE VCE= 4V, IC= 100mA 150 800 Transition frequency fT VCE= 6V, IC= 10mA 180 MHz V uA V ■ Classification of hfe Type 2SC3340-E 2SC3340-F 2SC3340-G Range 150-300 250-500 400-800 Marking BE BF BG 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors NPN Transistors 2SC3440 ■ Typical Characterisitics