2SC3318 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High voltage,High speed switching High reliability
Applications
General purpose power amplifiersThermal characteristics Item Symbol Test Conditions Min. Typ. Max. Units Rth(j-c) Junction to case 1.55 °C/W V V V V A A W Item Symbol Ratings Unit Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) -65 to +150 Electrical characteristics (Tc =25°C unless otherwise specified) Min. Typ. Max. Units V V V V mA mA V V µs µs µs Symbol V CBO VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions I CBO = 1mA ICEO = 10mA IC = 0.2A IEBO = 1mA VCBO = 500V VEBO = 7V IC = 5A, VCE = 5V IC = 5A, IB = 1A IC = 5A, IB1 = 1A IB2 = -2A, RL = 30 ohm Pw = 20 µs Duty=<2% 500 400 400 - - 1.0 - 1.0 1.0 1.5 0.5 1.5 0.15 Outline Drawings TO-3P JEDEC - EIAJ SC-65 500 400 400 +150 Collector-Base voltage V CBO Collector-Emitter voltage V CEO Collector-Emitter voltage V CEO(SUS) Emitter-Base voltage V EBO Collector current I C Base current I B Collector power disspation P C Operating junction temperature T j Storage temperature T stg Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Switching time Thermal resistance
2SC3318 FUJI POWER TRANSISTOR Base current I B[A] Collector Output Characteristics Collector-Emitter voltage VCE[V] DC Current Gain Collector current I C[A] D.C. current gain hFE Base and Collector Saturation Voltage Collector current I C[A] Saturation voltage V CE(sat), VBE(sat)[V] Safe Operating Area Collector-Emitter voltage VCE[V] Collector current I C[A] Switching Time Collector current I C[A] Switching time ton, tstg, tf [µs] *1 Switching Time Test Circuit