2SC3314 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. l Optimum for RF amplification of FM/AM radios. l High transition frequency fT. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 300 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance Symbol V CBO V CEO V EBO hFE * V CE(sat) V BE fT NF C re Zrb Conditions IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 1mA IC = 10mA, IB = 1mA V CE = 10V , IC = 1mA V CB = 10V , IE = –1mA, f = 200MHz V CB = 10V , IE = –1mA, f = 5MHz V CE = 10V , IC = 1mA, f = 10.7MHz V CB = 10V , IE = –1mA, f = 2MHz min 150 typ 0.1 0.7 300 2.8 max 220 4.0 1.5 Unit V V V V V MHz dB pF W *hFE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE Zrb — IE C re — V CE PG — IE 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 240 200 160 120 Ta=25˚C 80mA 60mA 40mA 20mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 800 600 200 500 700 400 100 300 Ta=25˚C VCE =10V Emitter current IE (mA ) Transition frequency fT (MHz ) VCB =10V f=2MHz Ta=25˚C Emitter current IE (mA ) Reverse transfer impedance Zrb (W ) 0.1 1 10 1000.3 3 30 3.0 2.5 2.0 1.5 1.0 0.5 f=10.7MHz Ta=25˚C IC =3mA 1mA Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) VCE =10V f=100MHz Ta=25˚C Emitter current IE (mA ) Power gain PG (dB)

NF — IE C ob — V CB VCB =6V f=100MHz R g=50W Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)