2SC3313 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For high-frequency amplification n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. l Optimum for RF amplification of FM/AM radios. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 300 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Common emitter reverse transfer capacitance Reverse transfer impedance Transition frequency Symbol V CBO V CEO V EBO hFE * C re Zrb fT Conditions IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 1mA V CE = 10V , IC = 1mA, f = 10.7MHz V CB = 10V , IE = –1mA, f = 2MHz V CB = 10V , IE = –1mA, f = 200MHz min 150 typ 250 max 250 1.6 Unit V V V pF W MHz *hFE Rank classification Rank B C hFE 70 ~ 160 110 ~ 250

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB Zrb — IE C re — V CE 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 80mA 60mA 40mA 20mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 Ta=25˚C VCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 0.3 1 3 10 120 100 f=2MHz Ta=25˚C VCB =6V 10V Emitter current IE (mA ) Reverse transfer impedance Zrb (W ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 f=10.7MHz Ta=25˚C IC =1mA, 3mA Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF)