2SC3297 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3297
DESCRIPTION
- ·With TO-220Fa package
- Low saturation voltage
- High speed switching time
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A PC Collector power dissipation T C=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3297 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA , IB=0 30 V V(BR)CBO Collector-base breakdown voltage IC=1mA , IE=0 30 V V(BR)EBO Emitter-base breakdown voltage IE=1mA , IC=0 5 V VCEsat Collector-emitter saturation voltage I C=2A ;IB=0.2A 1.0 V VBE Base-emitter on voltage I C=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current V CB=30V; IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=0.5A ; VCE=2V 70 280 hFE-2 DC current gain I C=3A ; VCE=5V 20 fT Transition frequency I C=0.5A ; VCE=5V 100 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3297 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)