2SC3294 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • High DC current gain. - Large current capacity and wide ASO. - On-chip Zener diode of 60+ 10V between collector and base. : Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. + High inductive load handling capability. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vocso 50x V Collector-to-Emitter Voltage Voro 5OX V Emitter-to-Base Voltage VEBO 6 Vv Collector Current Ig 3 A Collector Current (Pulse) Top 6 A Base Current Ip 0.6 A Collector Dissipation Po Te=25°C 25 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C 3X : With Zener diode (60+ 10V) Electrical Characteristics at Ta=25°C. min typ max unit Collector Cutoff Current Icgo Vep=40V,Ig=0 10 pA Emitter Cutoff Current TeBo Vep=5VIg=0 2 mA DC Current Gain bpp Vop=5V Ic=1.5A 1000 4000 Gain-Bandwidth Product fy Vor=5VI¢=1.5A 180 MHz C-E Saturation Voltage Vorwat) Ic¢=1.5A,Igp=6mA 10 15 v B-E Saturation Voltage Vpuieat) I¢=1.5A,Ip=6mA 20 V C-B Breakdown Voltage Vsrycso Ic=0.1mA,Ip=0 50 60 70 Vv C-E Breakdown Voltage Vipryceo Ic=1mA,Rpg=% 50 60 70 V Inductive Load Handling Es/b L=100mH,Rpp=1002 30 mJ (eansies Es/b Test Circuit Package Dimensions 2010C (unit : mm) Levee . b+$—18.0 2.7 sw [i ics | “TT -% 1. » of 4 —[s Ree = aoe ween IE ad Vec=20V CER 1.2 [08 ae 3] : 2: Collector Te=25°C ~* ~ es ve 3: Emitter “| JEDEC :T0220AB EIAS =: SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90595MO/D251MH/4217TA/D174MW, TS 8-6055 No.1422-1/3

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ee le H (22 peoiottil [Tt CR gi PP err yyy ot TT g Of 1.0 z $s .7 10 3 5 7 10 2 3 5 7 400 a Collector Current, Ig — A L—- mH a ASO = 2 Pc - Ta - RSE Na 1 ++—-FSS | yy 2m Ss to 1 TT See TT og ENT TT PES Ag Je 5 t+ SNC 2 a2 N NEE eee a } 0 2 40 © 60 10 120 “0 60 Collector-to-Emitter Voltage, Voz — V Ambient Temperature,Ta —°C No.1422-2/3

MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and ali their officers and employees, jointly and severally, against any and all claims and litigation and afl damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including cirouit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties,” This catalog provides information as of September, 1995, Specifications and information herein are subject to change without notice, No.1422-3/3