2SC3293 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- High DC current gain. + Large current capacity and wide ASO. - On-chip Zener diode of 60+ 10V between collector and base. - Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. + High inductive load handling capability. Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vcso 50x V Collector-to-Emitter Voltage Vcro 50x V Emitter-to-Base Voltage VEBO. 6 Vv Collector Current. Ig 2 A Collector Current (Pulse) Iop 4 A Base Current Ip 0.4 A Collector Dissipation Po Te=25°C 20 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C 2X : With Zener diode (60+ 10V) Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vep=40V,Ig=0 10 pA Emitter Cutoff Current Igpo Vep=5V,Ic¢=0 2 mA DC Current Gain bre Ver=5V,Ig=1A 1000 4000 Gain-Bandwidth Product fr Vor=5V,Ig=1A 180 MHz C-E Saturation Voltage Vegwat) Ic=1A.p=4mA 1.0 15° #V B-E Saturation Voltage Vpreat) Ic=1A.lgp=4mA 2.0 Vv C-B Breakdown Voltage Vierjcso §=I¢=0.1mA,Ip=0 50 60 710 Vv C-E Breakdown Voltage Visryjceo Ic=1mA,Rgg= 50 60 70 OV Inductive Load Handling Es/b L=100mH, Rgp=1002 25 mJ Capability Turn-ON Time ton Voec=20V,Ic=1A, 0.2 ws Storage Time tatg Ipi= —Ipg=4mA 8.5 us Fall Time tr 0.5 us Switching Time Test Circuit Package Dimensions 2010C PW = 50ys, Duty Cycle $ 1% (unit : mm) 151 —f-— 140 INPUT rel [-— fe | O —— em a SF | Fo PL dee te son’ 36. 12 108 1:Base 4 4 9} JEDEC:T0220AB Vee=—8¥ Voo™=20v i BIAS :SC46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN ’ 02196TS (KOTO) 8-5471, 5768/D251MH/5097KI/8253KI, TS No.1333-1/3
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& a SN ° aw é (TT SST] 10) <=} a E°CR TOT TES Og +++ + A a TTPO Wo PP TTT ti iy tt”, a a PT TT tT tt ttt fy a a LJ © vn L — oH Collector-to-Emitter Voltage,Vog — V Po — Te B 20 IN Br IN JERRRNEEE gé Sa NS NJ EEE TTT ING 0 2% 40 60 0 100 70 140 160 Case Temperature,Tc — °C WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, ury, M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1996, Specifications and information herein are subject to change without notice, No.1333-3/3