2SC3272 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272
DESCRIPTION
- With TO-126 package
- High breakdown voltage
APPLICATIONS
- For power amplification PINNING（see Fig.2） PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation T C=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=50mA ;IB=5m A 2.0 V V(BR)CBO Collector-base breakdown voltage I C=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage I C=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage I E=10μA; IC=0 5 V hFE DC current gain I C=10mA ; VCE=10V 39 180 ICBO Collector cut-off current V CB=200V; IE=0 0.5 μA IEBO Emitter cut-off current V EB=4V; IC=0 0.5 μA COB Output capacitance I E=0; VCB=30V;f=1MHz 3 pF fT Transition frequency I C=10mA ; VCB=30V 50 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272 PACKAGE OUTLINE Fig.2 outline dimensions