2SC3263 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3263
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V (BR)CEO= 230V(Min)
- Good Linearity of hFE
- Complement to Type 2SA1294
APPLICATIONS
- Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3263
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE DC Current Gain IC= 5A ; VCE= 4V 50 140 COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 250 pF fT Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V 60 MHz Switching Times ton Turn-on Time 0.3 μs tstg Storage Time 2.4 μs tf Fall Time IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC= 60V 0.5 μs hFE Classifications O Y 50-100 70-140 isc Website：www.iscsemi.cn 2