2SC3255 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1291
- Low collector saturation voltage
- High speed switching time
APPLICATIONS
- High current switching applications
- Power amplifications
- Invertrers ,converters PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 12 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector -emitter breakdown voltage I C=1mA ,IB=∞ 60 V V(BR)CBO Collector-base breakdown voltage I C=1mA ,IE=0 80 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage I C=5A; IB=0.25A 0.4 V ICBO Collector cut-off current V CB=40V; IE=0 100 μA IEBO Emitter cut-off current V EB=4V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=2V 70 280 fT Transition frequency I C=1A ; VCE=5V 100 MHz Switching times ton Turn-on time 0.1 μs ts Storage time 0.5 μs tf Fall time IC=5.0A IB1=- IB2=0.25A RL=6.67Ω;VCC≈20V 0.1 μs hFE Classifications Q R S 70-140 100-200 140-280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255