2SC3254 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, (J nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3254 a
DESCRIPTION
- Low Collector Saturation Voltage
- Good Linearity of hFe
- High Switching Speed
- Complement to Type 2SA1290
APPLICATIONS
- Various inductance lamp drivers for electrical equipment
- Inverters, converters
- Power amplifier
- Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V V V A A W IP t 1 »
- ' i I "' "^ PIN 1.BA3E 2. COLLECTOR TO-220C package U 1 J K T T C i -. B f -« V H :H3*"y
- .t- H II DIN A B r D F G H j K Q R S U U x'- L D mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — J5t.fr f N.I Senii-Ciiiiductors reserves the right to di;mge test conditions, paramotcr limits and p.icknge dimensions uithout iiitiico. liUbriniition Aimishal by N.I Scnii-Conductors is helicved to he holh iioairufe und reliuhle :it the lime of going (o PIXNS. I lin\\c\\er, N.I Seuii-Condiiclors iissnmos no rosponsihilily tor nii> errors or omissions discovered in ils ii.se. N'.l Semi-C'oiuluciors v.-iieiuir;i»es eustomcrs to verily lh;it Jnlushecls nre iiinvnl heloiv phiciny orders. Qualify 5emi-Conductors
Silicon NPN Power Transistor 2SC3254
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) IcBO IEBO HFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; RBE= m \\c= 1mA; IE=0 lE=1mA;lc=0 IC=3.5A;IB=0.175A VCB= 40V; IE= 0 VEB= 4V; lc= 0 lc=1A; VCE=2V lc=1A;VCE=5V MIN TYP. 100 MAX 0.4 100 100 280 UNIT V V V V uA uA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc=3A; IB1=-IB2=0.15A; RL=6.67Q; VCC=20V 0.1 0.5 0.1 u s |J S u s Classifications Q 70-140 R 100-200 S 140-280