2SC3254 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3254
DESCRIPTION
- Low Collector Saturation Voltage
- Good Linearity of hFE
- High Switching Speed
- Complement to Type 2SA1290
APPLICATIONS
- Various inductance lamp drivers for electrical equipment
- Inverters, converters
- Power amplifier
- Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 10 A PC Collector Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3254
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A 0.4 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE DC Current Gain IC= 1A ; VCE= 2V 70 280 fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V 100 MHz Switching times ton Turn-on Time 0.1 μs tstg Storage Time 0.5 μs tf Fall Time IC= 3A; IB1= -IB2= 0.15A; RL=6.67Ω; VCC= 20V 0.1 μs hFE Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn 2