2SC3254 SAVANTIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3254

DESCRIPTION

  • With TO-220 package
  • Short switching time
  • Low collector saturation voltage
  • Complement to type 2SA1290

APPLICATIONS

  • Various inductance lamp drivers for electrical equipment
  • Inverters,converters
  • Power amplifier
  • Switching regulator ,driver PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector- emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-peak 10 A PC Collector power dissipation T C=25 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3254 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=1mA ,RBE=; 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 7 V VCEsat Collector-emitter saturation voltage I C=3.5A; IB=0.175A 0.4 V ICBO Collector cut-off current V CB=40V; IE=0 100 µA IEBO Emitter cut-off current V EB=4V; IC=0 100 µA hFE DC current gain I C=1A ; VCE=2V 70 280 fT Transition frequency I C=1A ; VCE=5V 100 MHz Switching times ton Turn-on time 0.1 µs tstg Storage time 0.5 µs tf Fall time VCE=20V; IC=3A IB1=-IB2=0.15A;RL=6.67C 0.1 µs hFE Classifications Q R S 70-140 100-200 140-280

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3254 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3254