2SC3252 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
toducti, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3252
DESCRIPTION
- Low Collector Saturation Voltage
- Good Linearity of hFE
- High Switching Speed
- Complement to Type 2SA1288
APPLICATIONS
- Various inductance lamp drivers for electrical equipment
- Inverters, converters
- Power amplifier
- Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V y V A A w * ' * PIN t.BASE 1 j 2. COLLECTOR 3-B/iiTTER ; 2 Z TO-220C package , , T MQ u * j i * H K t C~l - B H ^ -VHP :.., H < f "fr.02 u i DIM A B C D F G H J K L R S U V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 150& r ^ ^ J N.I Semi-Cnmluctors reserves the right to change tost conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ot ijoi to press. lloue\\er, N.I Semi-Conductors nssumes no responsibility for an) errors or omissions discovered in its use. N.I Semi-Conductors encnura.ue1; customers lo verily that datasheets are current before placing orders. Quality 5emi-Conducfors
Silicon NPN Power Transistor 2SC3252
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEQ V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO hFE fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage'- Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 1mA; RBE^ °° lc= 1mA; IE=0 lE=1mA;lc=0 lc=1.5A; !B=75mA VCB= 40V; IE= 0 VEB= 4V; lc= 0 lc= 1A;VCE=2V lc=1A;VCE=5V MIN TYP. 100 MAX 0.4 100 100 280 UNIT V V V V uA uA MHz HFE Classifications Q 70-140 R 100-200 S 140-280