2SC3250 SAVANTIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3250

DESCRIPTION

  • With TO-220 package
  • High VCEO
  • Large PC

APPLICATIONS

  • For TV video output amplifier applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICP Collector current-peak 0.2 A PC Collector power dissipation T C=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3250 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=0.1mA ;IB=0 300 V V(BR)CBO Collector-base breakdown voltage I C=0.1mA ;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage I E=0.1mA ;IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=50mA ;IB=5mA 1.5 V VBE Base-emitter on voltage I C=30mA ; VCE=10V 1.2 V hFE-1 DC current gain I C=5mA ; VCE=50V 50 250 hFE-2 DC current gain I C=30mA ; VCE=10V 30 COB Collector output capacitance I E=0; VCB=30V,f=1MHz 5.0 pF fT Transition frequency I E=-20mA ; VCB=30V 70 100 MHz

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3250 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)