2SC3233 TOSHIBA

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TOSHIBA 2$C3233 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm APPLICATIONS a) 3

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HIGH SPEED DC-DC CONVERTER APPLICATIONS 2203] | _ o.gMax. e Excellent Switching Times O§s018 zr" 0.95Max. Z| L : ty = 1.0 us (Max.), tp = 1.0 us (Max) at Ic = 0.8A 3 ; © High Collector Breakdown Voltage : VoRO = 400 V wikba go © samen, 3 * MAXIMUM RATINGS (Ta = 25°C) 52203] 3 sae CHARACTERISTIC SYMBOL UNIT ~ x 3 FA Collector-Base Voltage Veopo | 500 | Vd Y ossors |} Ee Collector-Emitter Voltage Vero [| 400 [Vv |} sss 5 Poeun Emitter-Base Voltage VEBO are) 23 9 Collector Current [i [2 | A_] Tea ly Collector Power Ta = 25°C Ss) 1. BASE P Ww Bel 2. COLLECTOR Dissipation Te = 25°C Cc [20 ~~ be (HEAT SINK) Storage Temperature Range —55~150 JEDEC = TOSHIBA (A)2-7B1A (B)2-7B2A 261001642 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail dug f0 thelr inherent electrcal senstiy and wuineabty to physical ess. the responnbiy of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury. or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is, subject to change without notice 1999-06-21 1/3

TOSHIBA 2$C3233 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo __|Vop = 400V, Ip = 0 | — [| — | 100 | pA | Emitter Cut-off Current Ippo __|VEB=7V, Ic =0 [ — | — | 1] mal Collector-Base Breakdown acer rn rancolicmimte=o [aw | — | — |v Collector-Emitter Breakdown _ _ Sa vowonfeswmnwce [wl — |= |e ; Von =5V, 1g = 018 [== TJ cone ME Weg =5V, Io=1A | s{= t= Collector-Emitter Saturation = ton forsntesnen [= [= [rel Base-Emitter Saturation Rise Time 20 us Tp ae S Switchin; a Ipo Ipo 8 Time 8 Storage Time tetg a 25 | us Ipi = —Ipg = 0.08A veo, Fall Time tf DUTY CYCLE <1% ~ 1999-06-21 2/3

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Ht rt 1 = CES masiiinnsil Ht 5 ste Ee Be Sanit ati ts at 2 ii O41 Os ) 5 Sealine: mal Sere SS Sst 0.08 INT Ic (A A aa al 0.005 0.01 )R CURRE a sa ee at Se COLLECTO 3B Cc Cee 00 Zz esi Seer ee 1 100 1 =e I] Fe See weal a 10 mo © gl CHT i . x " R A 6.001 won T counon errr Sai PULSE G AREA Ey = Pa To=8 ities Seeatt y 2eemeta AFE Sa 2 a 8 Sr Ee oe Wh il a Re ie aS" os He [|| lig MAX (PULSED) IN 3 ost Hi} + Hh Y mit [Ig MAX PULSED) % =} SORT [7500 us 23 “HE a oe “pom INA Mei e328 ee oe 2 [eae soa | Be oe ieee rs < ENE 83 ogg terri 05 oo & — 1|Nvous) SNR A og tit NT Ig g =} 100 ms Ft AY ‘0.0050. OLLECTOR CURRE! 2 ost RATION Te = 25° SN \\ A ce EA OPEI x =aass1| - Ic om 2 GLE NONRE! | NA VBE (sat) TEE 3 SING PULSE ARNE ao aa nine perateD NE TER Coit Y WITH INCREASE -—} STi Bos EMIT’ mn VES INCI im 1000 g (OMMON = -55°C | | eel Sos! cuR RLY WITH [| 300 ge. 3] © 5 alll! So Ree aeroae 700 , SS Ip= Se IN TI 30 W) ESE = oalt 10 MITTER VOLTAGE Vog Sze Eo EI

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