2SC3231 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3231
DESCRIPTION
S : V(BR,CEO= 60V(Min)
- Large Current Capability
- High Collector Power Dissipation
APPLICATIONS
- Designed for BAA/ TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation @ Ta=25"C Total Power Dissipation @ Tc-25'C Junction Temperature Storage Temperature Range VALUE 200 150 -55-150 UNIT V V V A A A W ^ PIN i i 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package U 4 T t - B i-4 -». . v »i L 1 ±€fQ JCLW- * 1 K t H cH i I 1 'fri98' i U r U G r niw A B C D F G B J K L Q R S U V i mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 rs
- k j N.I Senii-CoiftliiLtors reserves the right to change test conditions, parameter limits and package dimensions \\vithout not ice. Information furnished by N,l Scmi-(_'onductors is believed to be hoih accurate and reliable at Ihe time of i?.niim in press. I lo\\\\e\\er, N.I Scmi-Coiiiliictors assumes no ruspoiisihilily for an\\s or omissions discovered in its use. N.I Seini-C'onduciors eiicoura»es customers to verify that Jatasheels aix- ciinvnt before placing orders. Qualify 5emi-Conductors
Silicon NPN Power Transistor 2SC3231
ELECTRICAL CHARACTERISTICS
Tc=25 C unless otherwise specified SYMBOL VcE(sat) VBE(sat) ICBO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 4A; IB= 0.4A lc= 4A; IB= 0.4A VCB=170V;IE=0 VEB= 5V; lc= 0 lc=1A;VCE=5V |c= 4A; VCE- 5V lc= 0.5A; VCE= 5V MIN TYP. MAX 1.0 1.5 150 UNIT V V uA uA MHz