2SC3231 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3231
DESCRIPTION
- With TO-220 package
- Wide area of safe operation
APPLICATIONS
- Switching regulators
- General purpose power amplifiers
- TV horizontal output applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 4 A PC Collector power dissipation T C=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3231 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ;IB=0 150 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.4A 1.0 V ICBO Collector cut-off current V CB=200V;IE=0 100 μA IEBO Emitter cut-off current V EB=7V; IC=0 100 μA hFE DC current gain I C=1A ; VCE=5V 30 150 fT Transition frequency I C=0.5A ; VCE=5V 8 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3231 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)