2SC3230 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^E.mi-Condit.cto'i ^Pr , Q nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3230
DESCRIPTION
- Collector-Emitter Breakdown Voltage : V(BR)CEo= 30V(Min)
- Good Linearity of hFE
- Complement to Type 2SA1276
APPLICATIONS
- Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VOBO VCEO VEBO Ic . IE PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V V V A A W -v , 2 * PIN 1. BASE . ; , I. COLLECTOR : 1 3. EMITTER i 2 z TO-220C package U k i A » 1
- * B H -i v H] 3-cry 4 H I } K T 11 H < i c i sT L j 0 DIM A B C D F G H j K L Q R S U V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1 31 6.65 8.86 rs 1 i]5 ot1 f N.I Senii-Conduetors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Semi-Conductors is helieved to he both accurate and reliable at the time ol>in» to press. llo\\\\e\\er. N.I Seini-CtinducUirs assumes no responsibilil> for an> errors or omissions discovered in its n>e." N.I Senn-C'undiicloiA ciiciuira.»es cuslomcrs to \\crily thai datiishocts ;ire enriviH helbiv placing orders. Quality 5emi-Conducfors
Silicon NPN Power Transistor 2SC3230
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(8R)EBO VcE(sat) VBE(OH) ICBO IEBO hpE-1 hFE-2 fr COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 10mA; IB= 0 lE=1mA; lc=0 lc= 2A; IB= 0.2A lc= 0.5A; VCE= 2V VOB= 20V; IE= 0 VEB= 5V; lc= 0 lc= 0.5A; VCE= 2V lc= 2.5A; VCE= 2V lc= 0.5A; VCE= 2V lE=0;VCB= 10V; f,est= 1.0MHz MIN TYP. 100 MAX 0.8 1.0 1.0 1.0 240 UNIT V V V V MA uA MHz PF hpE-1 Classifications o 70-140 Y 120-240