2SC3230 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3230
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1276
- Good linearity of hFE
APPLICATIONS
- General purpose applications
- Cordless telephone tx final amplifier application for 1.7MHz system PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IE Emitter current -3 A PC Collector power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3230 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 30 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 5 V VCE(sat) Collector-emitter saturation voltage I C=2A ;IB=0.2 A 0.3 0.8 V VBE Base-emitter on voltage I C=0.5A ; VCE=2V 0.75 1.0 V ICBO Collector cut-off current V CB=20V; IE=0 1.0 μA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 μA hFE-1 DC current gain I C=0.5A ; VCE=2V 70 240 hFE-2 DC current gain I C=2.5A ; VCE=2V 25 COB Collector output capacitance I E=0; VCB=10V,f=1MHz 35 pF fT Transition frequency I C=0.5A ; VCE=2V 100 MHz hFE-1 Classifications O Y 70-140 120-240
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3230 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)