2SC3229 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3229
DESCRIPTION
- With TO-220F package
- High voltage: VCEO=300V(min)
APPLICATIONS
- For color TV chroma output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 100 mA IB Base current 20 mA PC Collector power dissipation 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3229 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=10mA; IB=1m A 1.0 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V hFE-1 DC current gain I C=0.5mA ; VCE=10V 20 hFE-2 DC current gain I C=20mA ; VCE=10V 30 200 ICBO Collector cut-off current V CB=240V; IE=0 1.0 μA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 μA COB Output capacitance I E=0; VCB=20V;f=1MHz 4.0 pF fT Transition frequency I E=20mA ; VCB=20V 75 MHz
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3229 PACKAGE OUTLINE Fig.2 outline dimensions