2SC3211 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3211
DESCRIPTION
- Collector-Emiiter Sustaining Voltage- : VCEo(sus)= 500V(Min.)
- Low Collector Saturation Voltage : VcE(Mt)=1.0V(Max.)@lc=3A
- High Speed Switching
APPLICATIONS
- Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25'C) SYMBOL VCBO VCEO Veeo Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25'C Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 800 500 150 -55-150 UNIT V V V A A A W r 1 - PIN 1 1 3 1. BASE 2. COLLECTOR 3 -EMITTER TC-JPFs package V-- t " A IJ-; K T
- -• >. i. - B - -» C ^T-T , ~s" "." >F . . ^1 :' , r u r * >i..s. , i t *- -*-L -*-«-D 1 ^ , .. .». -^ DIM A B C D F H J K L N R S T U mm MIN 20.70 14.70 4.SO 0.90 3.20 3.70 0.50 16.40 1.90 10.30 5.60 1.30 3.10 8.70 0.5S MAX 21. 30 15.30 5.20 1.10 3.40 4.30 0.70 17,00 2,10 11.00 8.00 2.20 3.50 9,30 0.7S ^...^ i t
- -J N.I Scnii-Coiiductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ol'going to press. ll(iwe\\cr. N.I Scmi-Coiuluclors assumes MO responsibility for anv errors or omissions discovered in its use. N.I Scmi-( (inductors encuurai'es customers to verily that datasheets ;ire ciinvnl bel'ore placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor 2SC3211
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsEfeat) ICBO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 0.2A; L= 25rnH lc= 3A; IB= 0.6A lc= 3A; IB= 0.6A VCB= 800V; IE= 0 VEB= 5V; lc= 0 IC=0.1A;VCE=5V lc= 3A; VCE= 5V lc= 0.5A; Vce= 10V MIN 500 TYP. MAX 1.0 1.5 0.1 0.1 UNIT V V V mA mA MHz Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC=3A;IB1=-IB2=0.6A; Vcc= 200V 1.0 3.0 1.0 u s u s u s