2SC3211 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211
DESCRIPTION
- With TO-3PFa package
- High VCBO
- Low collector saturation voltage
APPLICATIONS
- For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 5 A ICP Collector current-peak 10 A IB Base current 3 A TC=25℃ 70 PC Collector power dissipation Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A ;L=25mH 500 V VCE(sat) Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage I C=3A; IB=0.6A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.1 mA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=3A ; VCE=5V 8 fT Transition frequency I C=0.5A ; VCE=10V 3 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=3A; IB1=-IB2=0.6A VCC=200V 1.0 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.3mm)