2SC3180 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3180
DESCRIPTION
- Low Collector Saturation Voltage- : VcEoatr 2.0V(Max.) @|c= 5A
- Good Linearity of hFE
- Complement to Type 2SA1263
APPLICATIONS
- Power amplifier applications
- Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 0.6 150 -55-150 UNIT V V V A A W W 2
- ;"$! j PIN 1.BASE 2. COLLECTOR i 3.Bu1ITTER \\ 2 TC-2PI package B <Qi ' ';» lr. •-. A • , » + .„ ._ 4 H K -* N -* C — s— ->- - \\ :.• , . Z » ,| , .. ;. _^^_j -* -* R H^ DIM A B C D F H j K L N Q H S U Z mm WIN 19.90 15.50 4.40 0.90 3,20 2.90 0.50 19,90 1.90 10.80 4.40 3.30 1.40 1.00 2.10 8,90 MAX 20.10 15.70 4.60 1.10 3.40 3.10 0.70 20.10 2.10 11,00 4.60 3.35 1.60 1.20 2.30 9.10 ,-F *.-.^D N.I Semi-Conductors reserves the right to change test conditions, parameter limits mid package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ofgoin 10 press. I |oue\\er. N.I Seiiii-Condiietors assumes no responsibility for an> errors or omissions discovered in iis use. N I Semi-O'iuliicioi-s encmirayes customers to \\erily Ilia! datasheets are current before pliiciny orders. Semi-Conductors
Silicon NPN Power Transistor 2SC3180
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(on) ICBO IEBO hpE-1 llFE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 5A; IB= 0.5A lc= 3A ; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; lc= 0 lo= 1A;VCE=5V lc= 3A; VCE= 5V IE=0; VCB= 10V; ftest= 1.0MHz lc= 1A; VCE= 5V MIN TYP. 105 MAX 2.0 1.5 160 UNIT V V V wA uA PF MHz
- hpE-1 Classifications R 55-110 80-160