2SC3180 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3180
DESCRIPTION
- Low Collector Saturation Voltage- : V CE(sat) = 2.0V(Max.) @I C = 5A
- Good Linearity of h FE
- Complement to Type 2SA1263
APPLICATIONS
- Power amplifier applications
- Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Vo ltage 80 V V CEO Collector-Emitter V oltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 6 A I B Base Current-Continuous 0.6 A P C Collector Power Dissipation @ T C =25℃ 60 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3180
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V (BR)CEO Collector-Emitter Breakdown Voltage I C = 50mA; I B = 0 80 V V CE (sat) Collector-Emitter Saturation Voltage I C = 5A; I B = 0.5A 2.0 V V BE( on Base-Emitter On Voltage I C = 3A ; V CE = 5V 1.5 V I CBO Collector Cutoff Current V CB = 80V; I E = 0 5 μA I EBO Emitter Cutoff Current V EB = 5V; I C = 0 5 μA h FE-1 DC Current Gain I C = 1A; V CE = 5V 55 160 h FE-2 DC Current Gain I C = 3A; V CE = 5V 35 C OB Output Capacitance I E = 0; V CB = 10V; f test = 1.0MHz 105 pF f T Current-Gain—Bandwidth Product I C = 1A; V CE = 5V 30 MHz h FE-1 Classifications R O 55-110 80-160