2SC3179 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2SC3179
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
- Low Collector Saturation Voltage : VcEfsatp 0.6V(Max.)@lc= 2A
- Complement to Type 2SA1262
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Total Power Dissipation @ Tc=25"C Junction Temperature Storage Temperature Range VALUE 150 -55-150 UNIT V V V A A W 'l PIN 1. BASE ', 2. COLLECTOR 'i 3 ayllTTER i 2 3 TO-220C package U k A1 : T... i
- * B H .J -« v • H L P K^tj .VOLOO*- * H , K f H c if rr DIIV A B C D F G H j K L R S U V 500' • • t mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Contluctors reserves the right lo change test conditions, parameter limits and puckage dimension* \\vithout nuiiee. Information furnished hy N.I Seini-fonduciors is believed to he both aeoimte and reliable nl Ihe lime of t-oinsi lo press. I loue\\er. N.I Senii-CoiidueUirs assumes no responsibilily lor an> errors or omissions discovered in its use. ^ N.I Semi-C'nndueiors eneuura.ues euslomers In \\orily that datasheets are eiirrcni before placing orders. Quality Semi-Conducfors
Silicon NPN Power Transistor 2SC3179
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VIBRJCEO VcE(sat) ICBO IEBO hFE fr COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 25mA; IB= 0 lc= 2A; IB= 0.2A VCB= 80V; IE= 0 VEB= 6V; lc= 0 lc=1A;VCE=4V IE=-0.2A; V0E=12V |E=0; VCB=10V;ftest=1MHz MIN TYP. MAX 0.6 100 100 UNIT V V uA nA MHz PF Switching Times ton *stg tf Turn-on Time Storage Time Fall Time lc=2A;RL=10Q, bi= -lB2= 0.2A, Vcc^ 20V 0.2 1.9 0.29 n s u s M S