2SC3179 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3179
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1262
- Low collector saturation voltage
APPLICATIONS
- Audio and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector- emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4 A IB Base current 1 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3179 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ,IB=0 60 V VCE(sat) Collector-emitter saturation voltage I C=2A; IB=0.2 A 0.6 V ICBO Collector cut-off current V CB=80V; IE=0 100 µA IEBO Emitter cut-off current V EB=6V; IC=0 100 µA hFE DC current gain I C=1A ; VCE=4V 40 fT Transition frequency I E=-0.2A ; VCE=12V 15 MHz COB Output capacitance f=1MHz ; V CB=10V 60 pF Switching times resistive load ton Turn-on time 0.2 µs ts Storage time 1.9 µs tf Fall time IC=2A IB1=-IB2=0.2A RL=10A;VCC=20V 0.29 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3179 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)