2SC3175 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc Website：www.iscsemi.cn 1 isc & iscsemi isregisteredtrademark iscSiliconNPNPowerTransistor 2SC3175
DESCRIPTION
- LowCollectorSaturationVoltage
- High switchingspeed
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Especially suitedforusein highdefinition CRTdisplay(VCC=12 to24V) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 400 V VCEO Collector-EmitterVoltage 200 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 7 A ICM CollectorCurrent-Pulse 12 A IB BaseCurrent-Continuous 4 A PC CollectorPowerDissipation @TC=25℃ 50 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc Website：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3175 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 200 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=5A;IB=0.5A 1.2 V ICBO CollectorCutoffCurrent VCB=400V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=6V;IC=0 100 μA hFE-1 DCCurrentGain IC=1A;VCE=1V 15 hFE-2 DCCurrentGain IC=5A;VCE=1V 10 50 fT Current-Gain—BandwidthProduct IE=-500mA;VCE=10V 10 40 MHz