2SC3173 SANYO
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No. 1309 2SC3173 NPN Epitaxial Planar Type Silicon Transistor iv Ss s SANYO For CRT Horizontat DeFLection Output Features: * High switching speed + Especially suited for use in high-definition CRT display (Vcc=6 to 12V) + Wide ASO and durable against breakdown Absolute Maximum Ratings at Ta=25°c unit Collector to Base Voltage VcCBO 330 v Collector to Emitter Voltage VCEO 150 v Emitter to Base Voltage VEBO 6 Vv Collector Current Ic 7 A Peak Collector Current icp 12 A Base Current IB 4 A Collector Dissipation Pc Te=25°C 50 W Junction Temperature T3 150 °c Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo VcB=200V, Ip=0 100 uA Emitter Cutoff Current IEBO VEB=5V, Ic=0 100 uA DC Current Gain hre(1) VcE=1V,Ic=1A 15 HFE (2) VcR=1V,I¢=5A 10 50 Gain Bandwidth Product ft VcE=10V,Ic=0.5A 10 40 MHz C-E Saturation Voltage VcE(sat) Ic=5A,Ip=0.5A 1 v B-E Saturation Voltage VBE(sat) Ic=5A,Ip=0.5A 1.2 v C-B Breakdown Voltage V(BR)CBO Ic=1mA, Ip=0 330 v C-E Breakdown Voltage V(BR)CEO Ic=1mA,RBE=@ 150 v E-B Breakdown Voltage V(BR)EBO Iz=1mA, I¢=0 6 v Fall Time te Ic=5A,1B1=-Ip2=0.5A 0.5 us Switching Time Test Circuit Case Outline 2010A (unit:mm) 8k ~ : z 27 INDUT > SB Feaq’® 1st 16 os 4 “Tez T ee TF Ry bane) rs ey PW=2048 vR 20 2 =e Duty Cycles 1% #50 i va toes? F™ —#- ec = 100u 4700 1000 4 i E: Emitter "oe MSC: Collector Vags-sy '0151=— 101B2=Ic “l sevec: TO-220AaB Br Base EIAJ : SC-46 | Information furnished by SANYO is believed to be accurate and reliable. However, no responsibility is assumed by SANYO for its use; nor for any infringements of patents or other rights of third parties which may result from its use, and no license is granted by implication or otherwise under any Patent or patent rights of SANYO. These specifications are subject to change without notice TOKYO SANYO ELECTRIC CO... LTD. SEMICONDUCTOR DIVISION 15-13, 6-CHOME, SOTOKANDA. CHIYODA-KU. TOKYO IO! JAPAN EBN42KT MT No 12NQ.1/9