2SC3171 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^s.m.i-donducto't iPioducki, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC3171
DESCRIPTION
- Collector-Emiiter Sustaining Voltage- : VCEo(susr 400V(Min.)
- Low Collector Saturation Voltage :VCE(«tr 1.0V(Max.)@lc=5A
- High Speed Switching
APPLICATIONS
- Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tr Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @Ta=25r Collector Power Dissipation @TC=25*C Junction Temperature Storage Temperature Range VALUE 500 400 100 150 -55-150 UNIT V V V A A W PIN 1 £ 3 1.BASE 2. COLLECTOR 3,aHTTER TC-SPFs package A K T ^ Q ^ T •».*; DIM A B C D F H J K L N Q R S T U «. C r D mm WIN 20,70 14.70 4.SO 0.90 3.20 3.70 0.50 16.40 1.90 10.30 5.60 1.30 3.10 S.70 0.55 MAX 2130 15.30 5.20 1.10 3.40 4.30 0.70 17.00 2,10 11.00 6.00 2.20 3.50 9,30 0.7S i — N.I Semi-CoiKluetors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time ol'gciint to press. lloue\\cr, N.I Senii-Condiiclors assumes no responsibility Ibranv errors or omissions discovered in its u>e." NJ Seiiii-Coudiiclois enctiura.ue-i customers to verify thai datasheets are current before placing orders. Qualify Semi-Conductors
Silicon NPN Power Transistor 2SC3171
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 0.2A; L= 25rnH lc= 5A; IB= 1A lc= 5A; IB= 1A VCB= 500V; IE= 0 VEB= 5V; lc= 0 lc= 0.1 A; VCE= 5V lc= 5A; VCE= 5V lc= 0.5A; VCE= 10V MIN 400 TYP. MAX 1.0 1.5 0.1 0.1 UNIT V V V mA mA MHz Switching Times, Resistive Load ton ts tf Turn-on Time Storage Time Fall Time lc=5A;lBi=-lB2=1A; VCC=100V 1.0 3.0 1.0 u s u s u s