2SC3144 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SC3144
DESCRIPTION
- With TO-220C package
- High switching speed
- High DC current gain
- Wide area of safe operation
- Complement to type 2SA1258
APPLICATIONS
- 60V/3A for High-Speed Drivers Applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 3 A ICP Collector current-Pulse 5 A TC=25℃ 20 PC Collector power dissipation Ta=25℃ 1.75 W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~125 ℃
Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SC3144 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage I C=5mA ;IE=0 70 V VCE(sat)-1 Collector-emitter saturation voltage I C=1.5A ,IB=3mA 0.9 1.5 V VCE(sat)-2 Collector-emitter saturation voltage I C=1.5A ,IB=3mA 2.0 V ICBO Collector cut-off current V CB=40V, IE=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 3.0 mA hFE DC current gain I C=1.5A ; VCE=2V 2000 fT Transition frequency I C=1.5A ; VCE=5V 200 MHz Switching times ton Turn-on time 0.3 μs ts Storage time 1.2 μs tf Fall time IC=1A ;IB1=-IB2=2m A RL=20Ω,VCC=20V 0.2 μs
Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SC3144 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)