2SC3143-HF-3_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High breakdown voltage
- Small output capacitance.
- Complementary to 2SA1257-HF ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 80 Collector Current - Pulse Icp 150 Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 180 Collector- emitter breakdown voltage VCEO Ic= 1 mA, RBE= ∞ 160 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 5 Collector-Base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=30mA, IB=3mA 0.7 Base - emitter saturation voltage VBE(sat) IC= 30 mA, IB= 3mA 1.2 Base - emitter voltage VBE) VCE= 5V, IC= 10mA 1.5 DC current gain hFE VCE= 5V, IC= 10mA 60 270 Turn-ON Time ton 0.18 Storage Time tstg 1 Fall Time tf 0.2 Collector output capacitance Cob VCB= 10V, f=10MHz 2 2.8 pF Transition frequency fT VCE= 10V, IC= 10mA 150 MHz V uA See specified Test Circuit us V
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SC3141-K3-HF 2SC3141-K4-HF 2SC3141-K5-HF Range 60-120 90-180 135-270 Marking K3 F K4 F K5 F NPN Transistors 2SC3143-HF 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Transistors ■ Typical Characterisitics PW=20µs D.C.″1% INPUT 20V 50Ω RB 2kΩ IB1 IB2 100µF 470µF --5V 10IB1=--10IB2=IC=10mA VR + + RL (For PNP, the polarity is reversed.) OUTPUT Switching Time Test Circuit IC -- VCE 10 126 82 400 IB=0 0.5mA 0.4mA 0.3m A 0.2mA 0.1mA IC -- VBE VCE=5V Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA Base-to-Emitter Voltage, VBE – V 1.0 332 5 7 10 7 10052 100 fT -- IC VCE=10V hFE -- IC 0.1 1.0 332 5 2 3 5 10 10052 2 100 1000 VCE=5V DC Current Gain, hFE Collector Current, IC – mA Gain-Bandwidth Product, fT – MHz Collector Current, IC – mA NPN Transistors 2SC3143-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics VCE(sat) -- IC 5 7 10 21.0 32 753 100 0.1 1.0 IC / IB=10 f=1MHz 7 10 2 31.0 532 75 100 2 1.0 Cob -- VCB Output Capacitance, Cob – pF V ,egatloV esaB-ot-rotcelloC CB -- V Collector Current, IC – mA Collector-to-Emitter Saturation Voltage, VCE(sat) – V VBE(sat) -- IC 5 7 10 21.0 32 753 100 1.0 IC / IB=10 Collector Current, IC – mA Collector-to-Base Saturation Voltage, VBE(sat) – V 0 20 40 60 80 100 120 1400 100 250 150 200 300 PC -- Ta Collector Dissipation, PC – mW Ambient Temperature, Ta – ˚C NPN Transistors 2SC3143-HF