2SC3134-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • High VEBO.
  • Wide ASO and high durability against breakdown.
  • Complementary to 2SA1252-HF ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 15 Collector Current - Continuous IC 150 Collector Current - Pulse ICP 300 Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 15 Collector-base cut-off current ICBO VCB= 40 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 10V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.5 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA 90 600 Collector output capacitance Cob VCB= 6V, f=1MHz 2.2 pF Transition frequency fT VCE= 6V, IC= 1mA 100 MHz V uA V ■ Classification of hfe Type 2SC3134-H4-HF 2SC3134-H5-HF 2SC3134-H6-HF 2SC3134-H7-HF Range 90-180 135-270 200-400 300-600 Marking H4 F H5 F H6 F H7 F 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC3134-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics IC -- VCE IB=0 200µA 150µA 100µA 50µA 250µAFrom top 500µA 450µA 400µA 350µA 300µA IC -- VBE 0 0.4 0.8 1.2 1.60 100 VCE=6V Pulse IC -- VCE 0 10 20 30 40 500 IB=0 70µA 60µA 50µA 40µA 30µA 20µA 10µA Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA Base-to-Emitter Voltage, VBE – V 1000 100 hFE -- IC 2 5 2 5 2 250.1 1.0 10 100

7 VCE=6V

DC Current Gain, hFE Collector Current, IC – mA 7 1.0 332 5 75 10 5 7 10021.0 Cob -- VCB f=1MHz 7 0.1 332 5 7 10 5 7 100 2210 100 1000 fT -- IC VCE=6V Pulse Gain-Bandwidth Product, fT – MHz Collector Current, IC – mA Output Capacitance, Cob – pF Collector-to-Base Voltage, VCB -- V NPN Transistors 2SC3134-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics VCE(sat) -- IC 5 7 10 21.0 32 753 100 2 0.1 1.0

2 IC / IB=10

Collector Current, IC – mA Collector-to-Emitter Saturation Voltage, VCE(sat) – V 0 20 40 60 80 100 120 140 200 120 160 240 PC -- Ta Collector Dissipation, PC – mW Ambient Temperature, Ta – ˚C NPN Transistors 2SC3134-HF