2SC3124 ISC
Document overview
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- PDF pages: 4
Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124
DESCRIPTION
- High Gain Bandwidth Product fT= 1100 MHz TYP .
APPLICATIONS
- Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE DC Current Gain IC= 8mA ; VCE= 3V 40 200 fT Current-Gain—Bandwidth Product IC= 8mA ; VCE= 10V 650 1100 MHz COB Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.9 1.3 pF rbb’ • CC Base Time Constant VCB= 10V,IC= 8 mA, f= 30 MHz 7 12 ps isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124 isc Website：www.iscsemi.cn 4