2SC3123 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123
DESCRIPTION
- High Conversion Gain G ce = 23dB TYP.
- Low Reverse Transfer Capacitance C re = 0.4pF TYP.
APPLICATIONS
- Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.4 0.5 pF fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 900 1400 MHz Gce Conversion Gain VCC= 12V;f= 200MHz,fL= 260MHz 20 23 dB NF Noise Figure VCC= 12V;f= 200MHz,fL= 260MHz 3.8 5.5 dB isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3123 isc Website：www.iscsemi.cn 4