2SC3122 TOSHIBA
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE TV VHF RF AMPLIFIER APPLICATIONS Unit in mm +05 © High Gain: Gpe=24dB (Typ.) (f=200MHz) 2 oe +0.25 © Low Noise : NF=2.0dB (Typ.) (f=200MHz) 2508, | @ Excellent Forward AGC Characteristics ws q *y MAXIMUM RATINGS (Ta = 25°C) 35 i _| HA CHARACTERISTIC SYMBOL UNIT cH Collector-Base Voltage VcBo . Collector-Emitter Voltage VCEO ne e| I Emitter-Base Voltage Vepo | 3 | V_ | sv ‘4 Collector Current a LL z Collector Power Dissipation [ Po | _150_~*| mw | e| Junction Temperature 125 Cc 2 EMITTER Storage Temperature Range =55~125 5 COLLECTOR Marking JEDEC _
3 Type Name EIA SC-59
o TOSHIBA _2-3F1A 1 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo | Vcp=25V, In=0 | — | — | 100] na | Emitter Cut-off Current Igpo __|VEB=2V, Ic=0 [| — | — | 100] na | Collector-Emitter DC Current Gain Vop=10V, Ig=amA | 0] 150] 300] —_| Reverse Transfer Capacitance Vcp=10V, In=0, f=1MHz [ — [| 03] 0.45] pF | Vor=12V, Vago=14v, |_20[ 24] 28] @B | £=200ME P= [20] a2) ae Vcoc=12V, GR=30¢B, AGC Voltage VaGC £=200MHz (Note) 5.1] V (Note) VAGc measured by test circuit shown in Fig.1 when power gain is reduced to 30dB compared that of Vagc at 1.4V. 261001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction gr fal due to their inherent electrical senstvity and vulnerability to physical tess. t's the responsibility of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-10-28 1/3
Fig.1 200MHz Gpe, NF TEST CIRCUIT ‘TpF 4pF 5pF. OUTPUT INPUT 1000pF x Rp =500 Rg=500 fc] g olF 47pF a. a 3 2 s Shale 1000pF i Py me om: a] ie 4 = TPR Vec cal 5S er 15 VaGc S Ps L1 : RF Coil M-15T (TOKO Inc.) or EQUIVALENT L2 : RF Coil M-25T (TOKO Inc.) or EQUIVALENT
0 Gpe, NF — VAGC hFE - Ic
C_] I. i a TORE] SOMMeN mhunter soo} | I TTT 2 - =e “OOE LL Shan e (| LUI TU 1
8 Hee & tT
10 Ta=25°C
é “OCT 2 oo TM TTT POEEILELELLELLI 2 8 SSS z 8 Peg EEE $ [TTT Ny TT yyy & § soph rr = ol | PAE), 2 i 3 [kes -\\ i - dd] 2 & | coMMON EMITTER ment | mo WMA TN eB es LE | eoLLT TU TT TTT TT | g 1 0 2 4 6 8 10 12 01 0.3 1 3 10 30 AGC VOLTAGE Vagc (V) COLLECTOR CURRENT Ig (mA) 1000 fr - Ic 5 Cre - VCB ~ a a cl a a | i) ee | a ee rs a Sen 2 [| [Mil TL) mo oe ee a 8 Ta=25°C eg et ||| a & 1/4 — 5 vo — ACUI ETT IN . == 2 wa mati 2° i E ZL COMMON EMITTER 2 Se g |f Vor=10v | = ost TT Pee | | 3 a eg | ==: oct ee — oe a Corny) oa Ol 0.3 1 3 10 01 0.3 1 3 10 30 COLLECTOR CURRENT Ic¢ (mA) COLLECTOR-BASE VOLTAGE Vcp (V) 1998-10-28 2/3
[ety REVERSE TRANSFER CONDUCTANCE gre (mS) aa) OOM AITTTER -08 -06 -04 02 0 02 O4 8 £ Vor=10v [1 Jomnl | PTT sa as Gee 8 ot | fw | ease ee eee 8 | - oe Ce 0h 2cun Une FEE A % a A \\\\ ve 3 [9H fone || Na a 2 ool flee, a \\ ev
8 UN ETA a a |
z i fk Poof YT) 8 Re EE ia | FERRER Rey"! Lome a ie 0 20 40 60 80 100 . INPUT CONDUCTANCE gie (mS) Me -£ Yor — £
7 FORWARD TRANSFER CONDUCTANCE gfe (mS) 7 “TTT TLL [40] common
E 5OMH25 to=2mA ° - ee ee 2 A fool PE Zz, -4 2009 fom gs “LET YT TTT TTT yt | ee [sm] [| eco) | fo sos 2 PTA tec LLL gE sae | 2 wi pa fee] E Wet fs Bost y Adin | ee oe oper ver eT sewn Bult 5 oe 8 Poo | TTT TT TT ee Le 8 Storia OUTPUT CONDUCTANCE go (mS) Pc - Ta 180; TTT TTT TTT TTT yy yyy 2 we OLCEE EE Ee i
2 TINE EE Ee
5 PP PtP TING tt
8 LET TT ttt tT PING ty |
oLLL TT TTT TT LINY TT | a a eC Cc) AMBIENT TEMPERATURE Ta (C) 4998-10-28 3/3