2SC3122 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High Gain: Gpe=24dB(Typ.)(f=200MHz) Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 30 V Emitter-base voltage V EBO 3V Collector current I C 20 mA Base current I B 10 mA Collector Power Dissipation P C 150 mW Junction temperature T j 125 Storage temperature Range T stg - 5 5t o+ 1 2 5
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO VCB = 25V, IE = 0 100 nA Emitter cut-off current I EBO VEB =2 V ,IC = 0 100 nA Collector-emitter breakdown voltage V (BR)CEO IC=1mA,IB=0 30 V DC current gain h FE VCE =1 0V ,IC = 2 mA 60 150 300 Reverse Transfer Capacitance Cre V CB=10V,IE=0,f=1MHz 0.3 0.45 pF Transition Frequency f T VCE =1 0V ,IC = 2mA 400 650 MHz Power Gain G pe Vce=12V,VAGC=1.4V,f=200MHz 20 24 28 dB Noise Figure NF 2.0 3.2 dB AGC Voltage V AGC 3.6 4.4 5.1 V *VAGC measured by test circuit shown in Fig.1 when power gain is reduced to 30dB compared that of VAGC at 1.4V VCC=12V,GR=30dB,f=200MHZ * Marking Marking HD 2SC3122