2SC3098 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm @ Low Noise Figure 25703 @ = NF=2.54B, |Sqiel?=14.5dB (f=500MHz) 151838 5-01, | od © = NF=3.04B, |S21¢l?=9.0dB (f=1GHz) FH Ss 4 < MAXIMUM RATINGS (Ta = 25°C) 3 [| {|| 4 aoc we Ht CHARACTERISTIC SYMBOL UNIT ~ | 3 Collector-Base Voltage Vcpo | 30 [| V_ | 2 Collector-Emitter Voltage Vcco | 20 | V | | ol miter Base Voleage Veso[ sf 43 Collector Current ca | ; Collector Power Dissipation Z| Storage Temperature Range —55~125 2. EMITTER 3. COLLECTOR Marking

3 Type Name JEDEC =

=a, EIAJ SC-59 | we“ | TOSHIBA 2-3F1A oy Weight : 0.012g 1 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Transition Frequency Vqg= IOV, Ig=10ma L— 35) — | oie | Tnsertion Gai Baie) |Vop=10V, Io=10mA, F=500MEz | — | 145 | — | ab | nsertion Gain ‘Saiel"@ [VcE=10V, Io=l0mA, F=1GHe [| — | 9[— | @B | Noise Fi NF()_[Vop=10V, Ic=5mA, f=500MHz =| — | 25[ — | aB | oise Figure NFQ)_[Von=10V, Io=bmA, f=1GHz | — | s>— |] | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION Collector Cut-off Current ICBO VcB=10V, In=0 | — | — | 1] 4A | Emitter Cut-oif Current | teno _|VeR=1V, Io=0 sere DC Current Gain VoE=10V, I¢=10mA | 30 | 80 | 500| —_| Collecter Output Capacitance Vcp=10V, In=0, [ — [115 [ — | pF | Reverse Transfer Capacitance f=1MHz Wotey | — [0.75[ — | Fr | (Note) Cre is measured by 3-terminal method with Capacitance Bridge. 96 1001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction gr fal due to their inherent electrical senstvity and vulnerability to physical tess. t's the responsibility of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and t0 avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © ‘he information contained herein is presented only as a guide for the applications, of our products. No responsibilty is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-10-28 1/3

hre - Ic ge Cob, Cre — VCB “TUM TTT = LM Tom . Cue) 2 Se Pope OT A

2 SSH ho eee i aaa

& a 8 2g a re Ess a oe a a ee a 33 of 8 a a ce a a s og | Pt tt ty ee og | TUT TT PZ . g LLU Til cet | Vor=10 a fotMite

1 Ta=25°C ag oal Ta=25°C

0 . 1 3 10 30 100 38 Oo. 03 1 3 10 COLLECTOR CURRENT Ic¢ (mA) COLLECTOR-BASE VOLTAGE Vcp (V) [Sa1el2 — Ic +0 Sarel2 — f LT AI FLU LT LUTTE | sexzer : TT NTI se LAU PT | LUNI TTT & & e LAU Lg LIN TTT Satin. BLING g fa10He g : Baie ll ol ol 1 3 10 30 100 01 0.3 1 3 10 COLLECTOR CURRENT Ig (mA) FREQUENCY f (GHz) NF - Ic NF -f 6 6 LEAT see ine _ f=1GHe _ Ig=5mA. SP TTT | mare ein & 4) fe 4 e KR LUTNT TM |g LETTE TUT BRS Tl) «= eI ey rt ee eT TTI TM = IT FT z z Q LUN TET LoL UT LEU 1 3 10 30 100 01 0.3 1 3 10 COLLECTOR CURRENT Ic¢ (mA) FREQUENCY f (GHz) 1998-10-28 2/3

TOSHIBA (263098 Ta=25°C Ta=25°C (UNIT : Q) OI, we CE SSSR SES 10, LA re LRT % i250 Ty ZS £S Sees Ty hs oo eS d 1 50 Ct CN 104 BS Satan CHa 1 C pusseee=: © cocezcons Tt) SSO pO CY 5250 <> LEAS ‘> LY LD

28 EEA Zj100 SAFER

VCE=10V VCE=10V I¢=10mA Ic=10mA Ta=25°C Ta=25°C 90° (UNIT : Q) 0 seorom gS OER we OLD tw

1507 SLL <\\ 30° LOSES TH LY

ZT ROOT LP REEERE_ TK HEE) PTR ae se eee Fare LC i] = US Spat aod SRST) ACSC, 30° nu Sev LEH wise ROSE CRORE Vow SEE ORE a a a eNO 1998-10-28 33